Field dependence of the E1' and M3' electron traps in inductively coupled Ar plasma treated n-Gallium Arsenide

摘要

Inductively coupled Ar plasma etching of n-type (Si doped) Gallium Arsenide (GaAs) introducesseveral electron traps, Ec – 0.04 eV (labelled E10), Ec – 0.19 eV, Ec – 0.31 eV, Ec – 0.53 eV, andEc – 0.61 eV (behaving like the well documented M3 and labelled M30 in this study), of which themetastable defects Ec – 0.04eV (E10 ), and Ec – 0.07 eV are novel. Furthermore, E10 and M30 exhibitstrong field enhanced carrier emission. Double-correlation deep level transient spectroscopy wasused to investigate the field dependent emission behaviour of these two defects. It is shown that forboth traps, the observed enhanced emission is due to phonon assisted tunnelling. The latterobservation is contrary to the literature reports suggesting that enhanced carrier emission for M3occurs via the Poole-Frenkel mechanism.